职称：研究员
研究所：碳基电子学研究中心
研究领域：射频器件与电路、三维异质集成微系统
办公电话：010-6275 5009
电子邮件：liuhonggang[at]pku.edu.cn
工作履历/科研教育经历：
2003年在中国科学院微电子研究所微电子学与固体电子学专业获博士学位；随后在加拿大Simon Fraser大学从事InP DHBT毫米波器件方面的博士后研究；2006年加入瑞士联邦理工学院（ETH Zurich）毫米波实验室从事太赫兹电子器件的研究，实现了600 GHz InP DHBT太赫兹晶体管及其毫米波集成电路；2009年受聘为中科院微电子研究所研究员、博士生导师、微波器件与集成电路研究室副主任等职位；入选中科院百人计划（引进国外杰出人才类）、江苏省高层次创新创业领军人才（创新类）、江苏省六大人才高峰等人才计划；2021年入职威尼斯欢乐娱人城1099碳基电子学研究中心担任研究员，主要从事碳基射频SoC芯片设计与三维异质集成微系统方面的研究。
先后承担国家重大专项、重点研发计划、973计划、自然基金等科技项目10余项，在IEEE Electron Device Letters、IEEE Transaction on Electron Devices、International Electron Devices Meeting（IEDM）、Advanced Materials、Scientific Report、ACS Applied Electronic Materials、等学术刊物发表论文百余篇，申请发明专利66项，其中中国授权专利46项、美国PCT专利4项。相关研究成果已经在高频测量仪器、毫米波雷达、宽带通信、智能感知等领域进入实用化阶段。
代表性学术论著：
期刊论文：
1.Zhen Zhang, Xin’gang Zhang, Zhi Huang, Yakuan Chang, Hudong Chang, Sen Huang,Honggang Liu* and Bing Sun, Aligned Carbon Nanotube Arrays with Germanium Protective Layers for Improving the Performance of Radio Frequency Transistors,ACS Appl. Nano. Mater.2023, DOI:10.1021/acsanm.2c05069
2.Xueyuan Liu, Bing Sun, Xiao Li, Zhen Zhang, Wenke Wang, Xin’gang Zhang, Zhi Huang, Huaping Liu, Hudong Chang, Rui Jia andHonggang Liu*, Floating Gate Carbon Nanotube Dual-Gate Field-Effect Transistor for Reconfigurable AND/OR Logic Gates,ACS Appl. Electron. Mater. 2022, 4, 1684−1691
3.Xueyuan Liu, Bing Sun, Kailiang Huang, Chao Feng, Xiao Li, Zhen Zhang, Wenke Wang, Xin’gang Zhang, Zhi Huang, Huaping Liu, Hudong Chang, Rui Jia andHonggang Liu*, Use of Ambipolar Dual-Gate Carbon Nanotube Field-Effect Transistor to Configure Exclusive-OR Gate,ACS Omega 2022, 7, 8819–8823
4.Jinwei Li, Bing Sun, Jiawei Huang, Lei Wu, Hudong Chang, Rui Jia,Honggang Liu*, A K-Band Broadband Power Amplifier With 15.7 dBm Power and 30.4% PAE in 0.13 μm CMOS,IEEE Transactions on Circuits and Systems 2022,DOI:10.1109/TCSII.2022.3229144
5.Jinwei Li, Bing Sun, Dongze Li, Qingzhen Xia, Jiawei Huang, Lei Wu, Hudong Chang, Rui Jia,Honggang Liu*, A K-band broadband low noise amplifier with 18.8dB gain and -13dBm IP1dB in 0.13-µm CMOS,IEICE Electronics Express 2022, 19 (16), 1-6
6.Jiawei Huang, Bing Sun, Jinwei Li, Lei Wu, Hudong Chang, Rui Jia andHonggang Liu*, A linear dual-control-voltage K-band VCO with a Gilbert frequency multiplier,IEICE Electronics Express 2022, 19 (8), 1–6
7.Jiawei Huang, Bing Sun, Jinwei Li, Lei Wu, Hudong Chang, Rui Jia andHonggang Liu*, A Low Phase Noise K-Band VCO With a Threshold Voltage-Based Current Source,IEEE Microwave and Wireless Components Letters 2022, 32 (8), 995-998
8.Dongze Li, Qingzhen Xia, Jiawei Huang, Jinwei Li, Hudong Chang, Bing Sun,Honggang Liu*, A 24 GHz Direct Conversion Receiver for FMCW Ranging Radar Based on Low Flicker Noise Mixer,Electronics 2021, 10, 722
9.Lei Wu, Jiawei Huang, Minglong Zhai, Bing Sun, Hudong Chang, Sen Huang andHonggang Liu*, Deformable Bowtie Antenna Realized by 4D Printing,Electronics 2021, 10, 1792
10.Qingzhen Xia, Dongze Li, Hudong Chang, Bing Sun,Honggang Liu*，A K-band highly linear power amplifier with superior temperature stability in 90nm Trap-rich SOI CMOS technology.Microwave Journal 2021, 64(9)
11.Dongze Li, Qingzhen Xia, Jiawei Huang, Hudong Chang, Bing Sun,Honggang Liu*, A 4-mW Temperature Stable 28GHz LNA with Resistive Bias Circuit for 5G Applications,Electronics2020, 9, 1225
12.Kailiang Huang, Minglong Zhai, Xueyuan Liu, Bing Sun, Hudong Chang, Jianhua Liu, Chao Feng,Honggang Liu*, Hf0.5Zr0.5O2ferroelectric embedded dual-gate MoS2field effect transistors for memory merged logic applications,IEEE Electron Device Letters2020, 41(10), 1600-1603.
13.Qingzhen Xia, Dongze Li, Jiawei Huang, Jinwei Li, Hudong Chang, Bing Sun,Honggang Liu*, A 28 GHz Linear Power Amplifier Based on CPW Matching Networks with Series-Connected DC-Blocking Capacitors,Electronics 2020, 9, 617
14.Sen Huang, Xinyu Liu, Jinhan Zhang, Ke Wei, Guoguo Liu, Xinhua Wang, Yingkui Zheng,Honggang Liu, Zhi Jin, Chao Zhao, Cheng Liu, Shenghou Liu, Shu Yang, Jincheng Zhang, Yue Hao, Kevin J Chen, High RF Performance Enhancement-Mode Al2O3/AlGaN/GaN MIS-HEMTs Fabricated With High-Temperature Gate-Recess Technique,IEEE Electron Device Letters2015, 36 (8), 754-756
15.Sen Huang, Qimeng Jiang, Ke Wei, Guoguo Liu, Jinhan Zhang, Xinhua Wang, Yingkui Zheng, Bing Sun, Chaorong Zhao,Honggang Liu, Zhi Jin, Xinyu Liu, Hongyue Wang, Shenghou Liu, Yunyou Lu, Cheng Liu, Shu Yang, Zhikai Tang, Y Hao, KJ Chen, High-temperature low-damage gate recess technique and ozone-assisted ALD-grown Al2O3gate dielectric for high-performance normally-off GaN MIS-HEMTs,IEEE International Electron Devices Meeting (IEDM 2014), 17.4, 1~4
16.Sheng-Kai Wang, Mingmin Cao, Bing Sun, Haiou Li,Honggang Liu*, Reducing the interface trap density in Al2O3/InP stacks by low-temperature thermal process,Applied Physics Express 2015, 8 (9), 091201
17.Zhenxing Wang, Shibo Liang, Zhiyong Zhang,Honggang Liu, Hua Zhong, Linhui Ye, Sheng Wang, Weiwei Zhou, Jie Liu, Yabin Chen, Jin Zhang, Lianmao Peng, Scalable fabrication of ambipolar transistors and radio-frequency circuits using aligned carbon nanotube arrays.Advanced Materials 2014, 26(4), 645-652
18.Huilong Xu, Zhiyong Zhang, Runbo Shi,Honggang Liu, Zhenxing Wang, Sheng Wang, Lian-Mao Peng, Batch-fabricated high-performance graphene Hall elements,Scientific Reports 2013, 3 (1), 1207
19.H.G. Liu*, H. D. Chang, B. Sun, Extrinsic Base Surface Passivation in Terahertz GaAsSb/InP DHBTs Using InGaAsP Ledge Structures,IEEE Transaction on Electron Devices, 2011, 58(2), 576
20.H.G. Liu, O Ostinelli, YP Zeng, Colombo R Bolognesi, Emitter-size effects and ultimate scalability of InP: GaInP/GaAsSb/InP DHBTs,IEEE Electron Device Letters2008, 29 (6), 546-548
21.H.G. Liu, Y.P. Zeng, O. Ostinelli and C.R. Bolognesi, 600 GHz InP/GaAsSb/InP DHBTs Grown by MOCVD with a Ga(As,Sb) Graded-Base and fT´BVCEO> 2.5 THz-V at Room Temperature,IEEE International Electron Devices Meeting (IEDM 2007), pp. 667-670, Washington DC, USA.
22.H.G. Liu, O. Ostinelli, Y.P. Zeng and C.R. Bolognesi, High-Current-Gain InP/GaInP/GaAsSb/InP DHBTs with fT= 436 GHz,IEEE Electron Device Letters2007, 28(10), pp. 852-855.
23.H.G. Liu, Olivier Ostinelli, Yuping Zeng, Colombo R Bolognesi, High-Gain Arsenic-Rich n-p-n InP/GaAsSb DHBTs With fT> 420 GHz,IEEE Transactions on Electron Devices2007, 54 (10), 2792-2795
24.W. Zhou, C.W. Tang, J. Zhu, K.M. Lau, Y. Zeng,H.G. Liu, N.G. Tao, and C.R. Bolognesi, Metamorphic Heterostructure InP/GaAsSb/InP HBTs on GaAs Substrates by MOCVD,IEEE Electron Device Letters 2007, 28(7), pp. 539-542.
25.J.M. Ruiz-Palmero, U. Hammer, H. Jackel,H.G. Liu, C.R. Bolognesi, Comparative technology assessment of future InP HBT ultrahigh-speed digital circuits,Solid-State Electronics 2007, 51, pp. 842–859.
26.HG Liu, SP Watkins, Colombo R Bolognesi, 15-nm base type-II InP/GaAsSb/InP DHBTs with FT= 384 GHz and a 6-V BVCEO,IEEE Transactions on Electron Devices 2006, 53 (3), 559-561
27.H.G. Liu, D.W. DiSanto, S.P. Watkins and C.R. Bolognesi, "InP/GaAsSb/InP DHBTs with fT = 300 GHz and high maximum oscillation frequencies: the effect of scaling on device performance",Phys. Stat. Sol. (c)2006, 3(3), pp4. 61-464.
28.Nick G.M. Tao,H.G. Liu, C.R. Bolognesi, Surface Recombination Currents in "Type-II" NpN InP-GaAsSb-InP Self-Aligned DHBTs,IEEE Transactions on Electron Devices2005, 52(6), pp. 1061-1066.
29.H.G. Liu, N. Tao, S.P. Watkins, C.R. Bolognesi, Extraction of the average collector velocity in high-speed “Type-II” InP-GaAsSb-InP DHBTs,IEEE Electron Device Letters,2004, 25(12), pp. 769-771.
30.H.G. Liu, J.Q. Wu, N. Tao, A.V. Firth, T.W. MacElwee, C.R. Bolognesi, High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100 mm InP substrates using PH3 and AsH3,Journal of Crystal Growth 2004, 267, pp. 592-597.
图书章节：
1.S. K. Wang,H. G. Liu, Passivation and Characterization in High-k/III-V Interfaces, in book entitled“Nanoscale Semiconductor Devices, MEMS, and Sensors: Outlook and Challenges”, Published by Springer Publisher, New York, USA, Feb. 2017
发明专利：
1.刘洪刚、张志勇、彭练矛，碳纳米管背面双栅场效应晶体管及其制备方法（2022102170872）
2.刘洪刚、张志勇、彭练矛，具有自对准源漏场板结构的碳纳米管器件及其制备方法（2022102677745）
3.刘洪刚、张志勇、彭练矛，具有T型源漏电极的背栅场效应晶体管及其制备方法、CMOS反相器（2022102739366）
4.刘洪刚、夏庆贞、翟明龙、张志勇、彭练矛，碳纳米管射频场效应晶体管及其制备方法（2022111766907）
5.刘洪刚、陈志成、张志勇、彭练矛，微带天线及毫米波雷达（2022105316880）
6.刘洪刚、吴俊宏、张志勇、彭练矛，碳纳米管肖特基二极管及其制备方法（2022105723374）
7.刘洪刚、司佳、张志勇、彭练矛，CMOS反相器和电子器件（2022111594671）
8.肖洪山、刘洪刚、张志勇、彭练矛，顶栅场效应晶体管及其制备方法（2022107426692）
9.翟明龙、刘洪刚、张志勇、彭练矛，场效应晶体管及其制备方法（2022104984199）
10.夏庆贞、刘洪刚、张志勇、彭练矛，基于碳纳米管肖特基二极管的倍频器电路（2022103032719）
11.夏庆贞、刘洪刚、张志勇、彭练矛，基于碳纳米管肖特基二极管的单平衡混频器电路（2022103032761）
12.刘洪刚、王虹，一种LTE射频功率放大器（CN201320257994.6）
13.刘洪刚、周佳辉，一种支持多频段的可调谐高效功率放大器（CN204013405U）
14.刘洪刚、夏庆贞等，共源共栅放大电路及功率放大器（ZL201610793670.2）
15.刘洪刚、夏庆贞，一种基于电容补偿技术的线性压控振荡器（CN110620552A）
16.刘洪刚、袁志鹏，一种共射共基异质结双极型晶体管（CN108598158A）
17.刘洪刚、孙兵等，一种增强型和耗尽型GaN HEMT集成结构（CN208028062U）
18.刘洪刚、李跃等，一种类Fin结构III-V族半导体场效应晶体管及其制备方法（CN201610817646.8）
19.吴磊、刘洪刚等，一种应用于毫米波雷达的串并结合馈电微带阵列天线（CN209282385U）
王盛凯、刘洪刚等，一种双栅InGaAs沟道的PMOS场效应晶体管（PCT/CN2016/112627）
