Peng,Lian-Mao received his B.S. in Physical Electronics from Peking University in 1982 and his Ph.D in Physics from Arizona State University in 1988, and spent the following six years working at the University of Oxford. He returned to China in 1995, first as a senior research scientist at the Institute of Physics, Chinese Academy of Sciences, and then joined the faculty of the Peking University and became the Yangzi Professor of Nanoscale Science and Technology in 1999, Director of the Key Laboratory for the Physics and Chemistry of Nanodevices in 2004, Head of the Department of Electronics in 2007, and Director of the Centre for Carbon based Nanoelectronics in 2015. His current research focuses on carbon-based high performance electronic and optoelectronic devices, and nanostructured photoelectrode materials and solar cells.

He has published over 300 research papers (www.researcherid.com/rid/E-2089-2011), and a book entitled “High-energy electron diffraction and microscopy” (1994, Oxford University). He is a Fellow of the Institute of Physics, UK and an Associate Editor for the Journal of Applied Physics. He served in the Commission on Electron Diffraction, IUCr, first as consultant in 2001, formal member in 2004, and then the chair in 2011. He received numerous awards, including 1990 IFSEM (International Federation of Societies for Electron Microscopy) Presidential Scholar; 1998 Qiu Shi Prize for Outstanding Young Scientist; 2003 Lee Hsun Lecture Award, Institute of Metal; 2009 Lin Zhao Qian Award, Chinese Electron Microscopy Society; 2011 Top 10 Science Advances, China; The 2010 State National Science Award, for “Studies on the fundamentals of quantitative electron microscopy and nanostructured titanium oxide”; and The 2016 State National Science Award, for project on “Electronic devices based on carbon-based nano materials”.

Selected publications:

1.L.-M. Peng, S.L. Dudarev, M.J. Whelan, High-energy electron diffraction and microscopy,Oxford University Press, 2004;

2. L.-M. Peng, Z.Y. Zhang and S. Wang, Carbon nanotube electronics: recent advances, Materials Today 17 (2014) 433-442；

3. C.G. Qiu, Z.Y. Zhang, M.M. Xiao, Y.J. Yang, D.L. Zhong and L.-M. Peng, Scaling carbon nanotube complementary transistors to 5-nm gate lengths, Science 355 (20 Jan 2017) 271-276.

4. Y. Liu, S. Wang, H.P. Liu and L.-M. Peng, Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system, Nature Communications (2017) in press

5. L. Ding, Z.Y. Zhang, S.B. Liang, T. Pei, S. Wang, Y. Li, W.W. Zhou, J. Liu and L.-M. Peng, “CMOS-based carbon nanotube pass-transistor logic Integrated circuits”, Nature Communications 3 (2012) 677;

6. L.J. Yang, S. Wang, Q.S. Zeng, Z.Y. Zhang, T. Pei, Y. Li and L.-M. Peng, “Extremely efficient photovoltage multiplication in carbon nanotubes”, Nature Photonics 5 (2011) 672.