Research Associate Professor
Research Center for Carbon-based Electronics
Research Interests: Microwave Components; Millimetre-wave and Terahertz Integrated Circuits
E-mail: defu.wang[at]pku.edu.cn
Education:
Harbin Institute of Technology, China, Electromagnetic Field and Microwave Technology, M.Sc
RWTH Aachen University, Germany, Electrical Engineering, Dr.-Ing
Research Experience:
10/2010-11/2015 RWTH Aachen University, High Frequency Electronics (HFE), Research Assistant
12/2015-01/2019 Leibniz-Institute for High Performance Microelectronics (IHP), Research Assistant
02/2019-11/2021 Fraunhofer Institute for Photonic Microsystems- Center Nanoelectronic Technologies (FhG-IPMS CNT)- Postdoctoral Researcher
12/2021-Present Research Center for Carbon-Based Electronics, Peking University, Research Associate Professor
Defu Wang received the M.Sc. degree in Electromagnetic Fields and Microwave Techniques from the Harbin Institute of Technology, Harbin, China, and the Dr.-Ing. degree in Electrical Engineering from RWTH Aachen University, Aachen, Germany. From 2010 to 2015, he was a Research Assistant with the Chair of High Frequency Electronics, RWTH Aachen University. In 2015, he joined the Circuit Design Department, IHP Microelectronics, Frankfurt (Oder), Germany, where he worked on the development of wideband submillimeter-wave systems for sensing and communications in 130 nm SiGe BiCMOS technology. From 2019 to 2021, he was with Center Nanoelectronic Technologies (CNT), Fraunhofer-IPMS, Dresden, Germany, where he is involved in the development of millimeter-wave circuits for communications and sensing in FD-SOI 22nm CMOS technology, and nonvolatile memory IP products in XFAB 180 SOI CMOS technology. Since 2021, he has been a Research Associate Professor of Carbon-based RF Electronics with Peking University, Peking, China.
Dr. Wang has served as a project leader at Fraunhofer IPMS-CNT for the joint project “T-KOS" – Terahertz technologies for communication and sensor technology, funded by Federal Ministry of Education and Research (BMBF), towards developing a German value chain for innovative THz technologies for communications and sensing applications. He was with the two leading research institutes from the Research Fab Microelectronics Germany (FMD).
Dr. Wang has continuously served as an oral presenter of the 2017-2020 IEEE MTT-S International Microwave Week (IMW). He also serves as a reviewer for the IEEE Microwave Magazine and the IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES.
Selected Works and Projects Since 2018:
1. 240 GHz and 500 GHz transceivers and on-chip terahertz sensing system in IHP 130 nm SiGe BiCMOS technology, and millimetre-wave radar front-ends in GF 22nm FD-SOI CMOS technology.
2. Participated in European projects of the ECSEL (BEYOND5, OCEAN12, WAKeMeUP) and two terahertz chip projects funded by the German Research Foundation (DFG) and the Federal Ministry of Education and Research (BMBF) (THz-LoC, T-KOS).
Patent:
"Voltage Controlled Oscillator based on carbon nanotube field-effect transistor" by Wang Defu, Zhang Zhiyong, and Peng Lianmao, Chinese Patent, 202211285072.6.
Journal Papers:
1. D. Wang, M. H. Eissa, K. Schmalz, T. Kämpfe and D. Kissinger, "240-GHz Reflectometer-Based Dielectric Sensor With Integrated Transducers in a 130-nm SiGe BiCMOS Technology," in IEEE Transactions on Microwave Theory and Techniques, vol. 69, no. 1, pp. 1027-1035, Jan. 2021
2. D. Wang, M. H. Eissa, K. Schmalz, J. Yun, A. Malignaggi, J. Borngräber, M. Kucharski, T. Kämpfe, K. Seidel, H. J. Ng and D. Kissinger,"240-GHz Four-Channel Power-Tuning Heterodyne Sensing Readout System With Reflection and Transmission Measurements in a 130-nm SiGe BiCMOS Technology," in IEEE Transactions on Microwave Theory and Techniques, vol. 67, no. 12, pp. 5296-5306, Dec. 2019
3. D. Wang, M. H. Eissa, K. Schmalz, T. Kämpfe and D. Kissinger, "480-GHz Sensor With Subharmonic Mixer and Integrated Transducer in a 130-nm SiGe BiCMOS Technology," in IEEE Microwave and Wireless Components Letters, vol. 30, no. 9, pp. 908-911, Sept. 2020
4. M. Kucharski, M. H. Eissa, A. Malignaggi, D. Wang, H. J. Ng and D. Kissinger, "D-Band Frequency Quadruplers in BiCMOS Technology," in IEEE Journal of Solid-State Circuits, vol. 53, no. 9, pp. 2465-2478, Sept. 2018
5. D. Wang, K. Schmalz, M. H. Eissa, J. Borngräber, M. Kucharski, M. Elkhouly, M. Ko, H. J. Ng and D. Kissinger, "Integrated 240-GHz Dielectric Sensor With dc Readout Circuit in a 130-nm SiGe BiCMOS Technology," in IEEE Transactions on Microwave Theory and Techniques, vol. 66, no. 9, pp. 4232-4241, Sept. 2018
Research Funding:
1. The General Program of National Natural Science Foundation of China (NSFC), 6227010838, 2023.01-2026.12 (In Charge)
2. The Key Research and Development Program of the Ministry of Science and Technology of China, SQ2022YFB4400184, 2022.10-2026.09 (Participated)
3. Two National Major Projects (Participated)
